Floating-gate nonvoltile memory data retention

A seminconductor memory failure mechanism. Nonvolatile memories are subject to several mechanisms that can cause data to be lost. For floating gate memories, a cell’s data (‘0’ or ‘1’) depends on whether its threshold voltage (VT ) is above or below a critical threshold level (VT,crit). The threshold voltage may shift over time, leading to a change in data. The most common mechanisms for threshold drift are dielectric charge leakage and dielectric charge detrapping. (Reference JEP122F)